晶体管障壁英文解释翻译、晶体管障壁的近义词、反义词、例句
英语翻译：
【电】 transistor barrier
分词翻译：
晶体管的英语翻译：
transistor
【计】 MOS transistor; npn
【化】 transistor
障壁的英语翻译：
【医】 barrier
网络扩展解释
晶体管障壁
晶体管障壁(jīng tǐ guǎn zhàng bì)是指晶体管的导通与截止之间的状态转换所需要超越的能量。在晶体管中，当控制电极的电压达到一定值时，会形成一个PN结，即障壁。这个障壁需要克服才能使晶体管导通，从而实现信号的放大或开关的控制。
英语解释
The translation of “晶体管障壁” is “transistor barrier”. The transistor barrier refers to the energy that needs to be surpassed for the state transition between conduction and cut-off of a transistor. When the voltage of the control electrode in the transistor reaches a certain value, a PN junction, namely a barrier, will be formed. This barrier must be overcome to make the transistor conduct, thus realizing signal amplification or switch control.
英文读音
“transistor barrier”的读音为/træn'zɪstə bærɪə/。
英文的用法
The concept of “transistor barrier” is widely used in the field of electronics. It is a key factor that affects the performance of a transistor and is often used to evaluate its quality. Moreover, it is also an important theoretical basis for the design and application of electronic circuits.
英文例句
Example sentence: When the voltage applied to the base of a transistor exceeds the transistor barrier, the transistor enters the conduction state and allows current to flow through it. （当晶体管基极的电压超过晶体管障壁时，晶体管进入导通状态，使电流通过它。）
英文近义词
Synonyms of “transistor barrier” include “transistor threshold voltage”, “PN junction barrier”, and “transistor cut-off voltage”.（“transistor barrier”的近义词包括“晶体管阈值电压”、“PN结障壁”和“晶体管截止电压”等。）
英文反义词
The antonym of “transistor barrier” is “transistor saturation voltage”.（“transistor barrier”的反义词为“晶体管饱和电压”。）
英文单词常用度
“transistor barrier”是一个相对专业的术语，在工程领域和学术界中使用频率较高。